c106b C106D c106m 4.0a sensitive gate silicon controlled rectifier 200 thru 600 volts to-126 case central semiconductor corp. tm r0 (27-april 2004) description: the central semiconductor c106b series are 4.0a, pnpn sensitive gate triggering silicon controlled rectifiers with voltages ranging from 200v to 600v. these devices are designed for applications such as temperature, light and speed control, remote warning and triggering applications. marking code: full part number maximum ratings: (t c =25c unless otherwise noted) symbol c106b C106D c106m units peak repetitive off-state voltage v drm, v rrm 200 400 600 v rms on-state current (t c =80c) i t(rms) 4.0 a peak non-repetitive surge current (t j =110c) i tsm 20 a i 2 t value for fusing (t=8.3ms) i 2 t 1.65 a 2 s peak gate power (t c =80c) p gm 0.5 w average gate power (t c =80c) p g(av) 0.1 w peak forward gate current (t c =80c) i gfm 0.2 a storage temperature t stg -40 to +150 c junction temperature t j -40 to +110 c thermal resistance jc 3.0 c/w thermal resistance ja 75 c/w electrical characteristics: (t j =25c unless otherwise noted) symbol test conditions min typ max units i drm, i rrm rated v drm, v rrm, r gk =1k ? 10 a i drm, i rrm rated v drm, v rrm, r gk =1k ?, t j =110c 100 a v tm i fm =4.0a 2.2 v i gt v ak =6.0v, r l =100 ? 200 a i gt v ak =6.0v, r l =100 ?, t j = -40c 500 a v gt v ak =6.0v, r l =100 ? 0.4 0.8 v v gt v ak =6.0v, r l =100 ?, t j = -40c 0.5 1.0 v i h v d =12v 3.0 ma i h v d =12v, t j = -40c 6.0 ma i h v d =12v, t j =110c 2.0 ma i l v d =12v 5.0 ma i l v d =12v, t j = -40c 7.0 ma dv/dt v d = rated v drm , r gk =1k ?, t j =110c 8.0 v/s
min max min max a 0.094 0.110 2.40 2.80 b c 0.015 0.030 0.38 0.75 d 0.291 0.335 7.40 8.50 e f 0.118 0.134 3.00 3.40 g 0.413 0.472 10.50 12.00 h j 0.024 0.035 0.62 0.90 k l m 0.045 0.055 1.14 1.40 n to-126 (rev:r3) 15.70 0.618 2.25 4.50 0.089 0.177 2.10 0.083 dimensions symbol inches millimeters 1.27 0.050 3.75 0.148 central semiconductor corp. tm to-126 case - mechanical outline c106b C106D c106m 4.0a sensitive gate silicon controlled rectifier 200 thru 600 volts r0 (27-april 2004) lead code: 1) cathode 2) anode 3) gate marking code: full part number
|
